Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C16-16GTZN 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.3

测试中的平均数值

G Skill Intl F4-3200C16-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

3,405.2 17.8
写入速度，GB/s

2,622.0 14.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3568

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Golden Empire CL19-19-19 D4-2666 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

SK Hynix HMT41GS6BFR8A-PB 8GB

Kingston 9905665-014.A00G 4GB

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Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB