Kingston 9905469-153.A00LF 4GB vs Kingston HP26D4S9S8MH-8 8GB

总分

Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

总分

Kingston HP26D4S9S8MH-8 8GB

Kingston HP26D4S9S8MH-8 8GB

差异规格评论

差异

Kingston 9905469-153.A00LF 4GB

需要考虑的原因
Kingston 9905469-153.A00LF 4GB

报告一个错误

Kingston HP26D4S9S8MH-8 8GB

需要考虑的原因
Kingston HP26D4S9S8MH-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 -11% 更低的延时
更快的读取速度，GB/s

14.6 11.8

测试中的平均数值
更快的写入速度，GB/s

10.7 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-153.A00LF 4GB

Kingston HP26D4S9S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 35
读取速度，GB/s

11.8 14.6
写入速度，GB/s

8.2 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1901 2560

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-4000C18-8GVK 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

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Avant Technology J641GU42J5213N0 8GB

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Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB