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Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3200C14-16GTZDCB 16GB

Kingston 9905471-001.A01LF 2GB vs G Skill Intl F4-3200C14-16GTZDCB 16GB

总分
star star star star star
Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

差异 规格 评论

差异

Kingston 9905471-001.A01LF 2GB 需要考虑的原因
Kingston 9905471-001.A01LF 2GB
报告一个错误
G Skill Intl F4-3200C14-16GTZDCB 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZDCB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 25
    左右 -19% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 21
  • 读取速度，GB/s
    12.8 left arrow 19.5
  • 写入速度，GB/s
    8.3 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1896 left arrow 3512

Kingston 9905471-001.A01LF 2GB RAM的比较

Kingston 99U5316-058.A00LF 2GB
G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-3200C14-16GTZDCB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905712-009.A00G 16GB
Kingston 9905712-009.A00G 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston ACR26D4U9D8MH-16 16GB
Kingston ACR26D4U9D8MH-16 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Samsung M378A4G43AB2-CWE 32GB
Samsung M378A4G43AB2-CWE 32GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M2C3333C16 8GB
Corsair CMK16GX4M2C3333C16 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM