Samsung M393B1G70BH0-YK0 8GB vs Corsair CMK16GX4M2C3333C16 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Corsair CMK16GX4M2C3333C16 8GB

需要考虑的原因
Corsair CMK16GX4M2C3333C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

21.3 10.2

测试中的平均数值
更快的写入速度，GB/s

17.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Corsair CMK16GX4M2C3333C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.2 21.3
写入速度，GB/s

8.1 17.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 4251

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR26D4S9S8MH-8 8GB

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G Skill Intl F4-3200C16-16GVS 16GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

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Corsair CMD16GX3M2A1866C9 8GB

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Corsair CMK16GX4M2B3333C16 8GB

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Crucial Technology BLS8G4D240FSEK.8FD 8GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB