Kingston 9905471-001.A01LF 2GB vs Kingston ACR26D4S9S8MH-8 8GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Kingston ACR26D4S9S8MH-8 8GB

需要考虑的原因
Kingston ACR26D4S9S8MH-8 8GB

报告一个错误

更快的读取速度，GB/s

14.2 12.8

测试中的平均数值
更快的写入速度，GB/s

11.4 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

Kingston ACR26D4S9S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.8 14.2
写入速度，GB/s

8.3 11.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1896 2462

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M378A2K43EB1-CWE 16GB

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Corsair CM3X2G1600C9DHX 2GB

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Team Group Inc. DDR4 3600 8GB

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Corsair CMK64GX4M4D3000C16 16GB

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Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

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G Skill Intl F4-3200C14-8GTZKY 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-2400C15-4GVR 4GB

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Crucial Technology CB8GS2400.C8JT 8GB