Kingston 9905471-002.A00LF 2GB vs A-DATA Technology AM1P24HC8T1-BBJS 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

A-DATA Technology AM1P24HC8T1-BBJS 8GB

A-DATA Technology AM1P24HC8T1-BBJS 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

A-DATA Technology AM1P24HC8T1-BBJS 8GB

需要考虑的原因
A-DATA Technology AM1P24HC8T1-BBJS 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 73

左右 -78% 更低的延时
更快的读取速度，GB/s

14.9 6.1

测试中的平均数值
更快的写入速度，GB/s

6.9 4.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

A-DATA Technology AM1P24HC8T1-BBJS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 41
读取速度，GB/s

6.1 14.9
写入速度，GB/s

4.7 6.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1021 2087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD824A.M16FB 16GB

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A-DATA Technology DDR3 1600 4GB

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Panram International Corporation PUD43000C164G2NJK 4GB

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G Skill Intl F4-3000C15-4GRBB 4GB

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Samsung M393B5170FH0-CH9 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

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Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Kingston 9965662-016.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

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