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Kingston 9905471-002.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB

Kingston 9905471-002.A00LF 2GB vs Essencore Limited IMT451U6MFR8Y-EC1 4GB

总分
star star star star star
Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分
star star star star star
Essencore Limited IMT451U6MFR8Y-EC1 4GB

Essencore Limited IMT451U6MFR8Y-EC1 4GB

差异 规格 评论

差异

Kingston 9905471-002.A00LF 2GB 需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
Essencore Limited IMT451U6MFR8Y-EC1 4GB 需要考虑的原因
Essencore Limited IMT451U6MFR8Y-EC1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 73
    左右 -181% 更低的延时
  • 更快的读取速度，GB/s
    11.5 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 4.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 8500
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    73 left arrow 26
  • 读取速度，GB/s
    6.1 left arrow 11.5
  • 写入速度，GB/s
    4.7 left arrow 10.3
  • 内存带宽，mbps
    8500 left arrow 12800
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1021 left arrow 2353

Kingston 9905471-002.A00LF 2GB RAM的比较

Kingston 9905474-029.A00LF 2GB

Essencore Limited IMT451U6MFR8Y-EC1 4GB RAM的比较

SK Hynix HMA81GU6JJR8N-VK 8GB
Kingston ACR21D4S15HAG/8G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GR7MFR4N-UH 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM2666HLB-16G 16GB
Transcend Information JM2666HLB-16G 16GB
内存RAM
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMK32GX4M2Z3200C16 16GB
Corsair CMK32GX4M2Z3200C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology DDR4 3333 2OZ 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM