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Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB

Kingston 9905471-002.A00LF 2GB vs Crucial Technology BLS16G4D30AESB.M16FE 16GB

总分
star star star star star
Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分
star star star star star
Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

差异 规格 评论

差异

Kingston 9905471-002.A00LF 2GB 需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
Crucial Technology BLS16G4D30AESB.M16FE 16GB 需要考虑的原因
Crucial Technology BLS16G4D30AESB.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 73
    左右 -181% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 4.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 26
  • 读取速度，GB/s
    6.1 left arrow 18.5
  • 写入速度，GB/s
    4.7 left arrow 14.1
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1021 left arrow 3596

Kingston 9905471-002.A00LF 2GB RAM的比较

Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2666C19-16GIS 16GB
G Skill Intl F4-2666C19-16GIS 16GB
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Kingmax Semiconductor FLFE85F-C8KL9 2GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Kingston 9905622-051.A00G 8GB
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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AMD R744G2133U1S 4GB
内存RAM
Kingston 9905403-515.A00LF 8GB
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Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F4-2800C16-4GVR 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM