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Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB

Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-2400C15-16GTZRX 16GB

总分
star star star star star
Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分
star star star star star
G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

差异 规格 评论

差异

Kingston 9905471-002.A00LF 2GB 需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
G Skill Intl F4-2400C15-16GTZRX 16GB 需要考虑的原因
G Skill Intl F4-2400C15-16GTZRX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 73
    左右 -161% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 4.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 28
  • 读取速度，GB/s
    6.1 left arrow 15.8
  • 写入速度，GB/s
    4.7 left arrow 9.4
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1021 left arrow 2510

Kingston 9905471-002.A00LF 2GB RAM的比较

Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB

G Skill Intl F4-2400C15-16GTZRX 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Crucial Technology CT25664BA160B.C16F 2GB
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A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
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内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
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Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM