Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-2666C19-8GVK 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

G Skill Intl F4-2666C19-8GVK 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 73

左右 -87% 更低的延时
更快的读取速度，GB/s

15.3 6.1

测试中的平均数值
更快的写入速度，GB/s

12.1 4.7

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2666C19-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 39
读取速度，GB/s

6.1 15.3
写入速度，GB/s

4.7 12.1
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1021 2760

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HYMP512S64CP8-Y5 1GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB