Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

G Skill Intl F4-3200C14-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 73

左右 -128% 更低的延时
更快的读取速度，GB/s

15.6 6.1

测试中的平均数值
更快的写入速度，GB/s

13.2 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C14-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 32
读取速度，GB/s

6.1 15.6
写入速度，GB/s

4.7 13.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2D3600C16 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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Apacer Technology 76.C102G.D170B 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology BL16G32C16S4B.M8FB1 16GB

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G Skill Intl F4-4133C19-8GTZSWC 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 9905630-005.A00G 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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