Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

G Skill Intl F4-3200C15-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 73

左右 -135% 更低的延时
更快的读取速度，GB/s

11.8 6.1

测试中的平均数值
更快的写入速度，GB/s

10.0 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3200C15-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 31
读取速度，GB/s

6.1 11.8
写入速度，GB/s

4.7 10.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-002.A00LF 2GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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AMD R5S38G1601U2S 8GB

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Corsair CMK16GX4M2K3600C19 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

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Samsung M471B1G73QH0-YK0 8GB

Kingston 9905713-019.A00G 4GB

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