Kingston 9905471-002.A00LF 2GB vs G Skill Intl F4-3333C16-16GTZ 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

G Skill Intl F4-3333C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 73

左右 -192% 更低的延时
更快的读取速度，GB/s

15.8 6.1

测试中的平均数值
更快的写入速度，GB/s

11.8 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3333C16-16GTZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 25
读取速度，GB/s

6.1 15.8
写入速度，GB/s

4.7 11.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 3081

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston CBD32D4S2S1ME-8 8GB

Kingston CBD32D4S2S1ME-8 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 16ATF2G64AZ-2G6H1 16GB

Micron Technology 16ATF2G64AZ-2G6H1 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

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G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C10 8GB

Corsair CMD16GX3M2A1866C10 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB