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Kingston 9905471-002.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB

Kingston 9905471-002.A00LF 2GB vs Golden Empire CL19-25-25 D4-4000 4GB

总分
star star star star star
Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分
star star star star star
Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

差异 规格 评论

差异

Kingston 9905471-002.A00LF 2GB 需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
Golden Empire CL19-25-25 D4-4000 4GB 需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 73
    左右 -217% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 4.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 23
  • 读取速度，GB/s
    6.1 left arrow 17.5
  • 写入速度，GB/s
    4.7 left arrow 12.8
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1021 left arrow 3037

Kingston 9905471-002.A00LF 2GB RAM的比较

Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB

Golden Empire CL19-25-25 D4-4000 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F4-3600C18-32GTRG 32GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Golden Empire CL19-25-25 D4-4000 4GB
Golden Empire CL19-25-25 D4-4000 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 99U5625-015.A00G 16GB
Kingston 99U5625-015.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 9965596-031.B00G 8GB
Kingston 9965596-031.B00G 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMW128GX4M8X3600C18 16GB
Corsair CMW128GX4M8X3600C18 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
AENEON AET760UD00-370B97X 1GB
AENEON AET760UD00-370B97X 1GB
A-DATA Technology AD5U48008G-B 8GB
A-DATA Technology AD5U48008G-B 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM