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Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
比较
Kingston 9905471-002.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
总分
Kingston 9905471-002.A00LF 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
73
左右 -97% 更低的延时
更快的读取速度,GB/s
10.4
6.1
测试中的平均数值
更快的写入速度,GB/s
7.8
4.7
测试中的平均数值
更高的内存带宽,mbps
19200
8500
左右 2.26 更高的带宽
规格
完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
73
37
读取速度,GB/s
6.1
10.4
写入速度,GB/s
4.7
7.8
内存带宽,mbps
8500
19200
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1021
2213
Kingston 9905471-002.A00LF 2GB RAM的比较
Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
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Samsung V-GeN D4S16GL32A8TS 16GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3600C17-4GVK 4GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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TwinMOS 8DHE3MN8-HATP 2GB
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Mushkin MR[ABC]4U320GJJM16G 16GB
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Team Group Inc. TEAMGROUP-D4-3600 4GB
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Kingston 9905630-039.A00G 16GB
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OCMEMORY OCM2933CL16-16GBH 16GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Samsung M378A5244CB0-CTD 4GB
Corsair CMK16GX4M4B3000C15 4GB
报告一个错误
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Bug description
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