Kingston 9905471-002.A00LF 2GB vs Kingston KF3600C16D4/8GX 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Kingston KF3600C16D4/8GX 8GB

需要考虑的原因
Kingston KF3600C16D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 73

左右 -152% 更低的延时
更快的读取速度，GB/s

20.1 6.1

测试中的平均数值
更快的写入速度，GB/s

15.8 4.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Kingston KF3600C16D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 29
读取速度，GB/s

6.1 20.1
写入速度，GB/s

4.7 15.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1021 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112S64CP6-S6 1GB

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INTENSO 5641160 8GB

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G Skill Intl F4-3200C16-8GFX 8GB

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Kingston 9905471-002.A00LF 2GB

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Kingston KF3600C16D4/8GX 8GB

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Kingston 9965525-140.A00LF 8GB

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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

Samsung M391B5273CH0-CH9 4GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3600C16-8GVK 8GB

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Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CB16GU2666.C8ET 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB