Kingston 9905471-002.A00LF 2GB vs Kingston KHX3600C17D4/16GX 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Kingston KHX3600C17D4/16GX 16GB

需要考虑的原因
Kingston KHX3600C17D4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的读取速度，GB/s

18.4 6.1

测试中的平均数值
更快的写入速度，GB/s

15.9 4.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Kingston KHX3600C17D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

6.1 18.4
写入速度，GB/s

4.7 15.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1021 3785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR2 800G 2GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

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Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Corsair CMW64GX4M4D3600C18 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB