Kingston 9905471-002.A00LF 2GB vs Samsung M393A1G40DB0-B`B 8GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Samsung M393A1G40DB0-B`B 8GB

需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

10.4 6.1

测试中的平均数值
更快的写入速度，GB/s

5.5 4.7

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Samsung M393A1G40DB0-B`B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

6.1 10.4
写入速度，GB/s

4.7 5.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1021 1806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-4000C14-8GTZR 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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Samsung M471B5173QH0-YK0 4GB

SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

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AMD AE34G1601U1 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Samsung M393B1G70QH0-YK0 8GB

Kingston 9965698-001.A00G 16GB

Kingston 9965698-001.A00G 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9965589-037.D00G 8GB

Kingston 9965589-037.D00G 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

Crucial Technology BLS4G4D26BFSE.8FBD2 4GB