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Kingston 9905471-002.A00LF 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

Kingston 9905471-002.A00LF 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

Kingston 9905471-002.A00LF 2GB 需要考虑的原因
Kingston 9905471-002.A00LF 2GB
报告一个错误
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    58 left arrow 73
    左右 -26% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 4.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-002.A00LF 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 58
  • 读取速度，GB/s
    6.1 left arrow 18.5
  • 写入速度，GB/s
    4.7 left arrow 9.5
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1021 left arrow 1998

Kingston 9905471-002.A00LF 2GB RAM的比较

Kingston 9905474-029.A00LF 2GB
Essencore Limited IMT451U6MFR8Y-EC1 4GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F3-12800CL7-4GBXM 4GB
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Corsair CMZ16GX3M2A1866C9 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-061.A00LF 2GB
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Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
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内存RAM