Kingston 9905471-002.A00LF 2GB vs SK Hynix HMA82GU6CJR8N-VK 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

SK Hynix HMA82GU6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GU6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 73

左右 -121% 更低的延时
更快的读取速度，GB/s

16 6.1

测试中的平均数值
更快的写入速度，GB/s

12.1 4.7

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

SK Hynix HMA82GU6CJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 33
读取速度，GB/s

6.1 16.0
写入速度，GB/s

4.7 12.1
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1021 3082

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology AFSD416ES1P 16GB

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston XN205T-MIE2 16GB

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Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Corsair CMSX8GX4M1A2400C16 8GB

Corsair CMSX8GX4M1A2400C16 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB