Kingston 9905471-006.A01LF 4GB vs Corsair CMW8GX4M1Z3600C18 8GB

总分

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

总分

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

差异规格评论

差异

Kingston 9905471-006.A01LF 4GB

需要考虑的原因
Kingston 9905471-006.A01LF 4GB

报告一个错误

Corsair CMW8GX4M1Z3600C18 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

20.6 12

测试中的平均数值
更快的写入速度，GB/s

16.1 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A01LF 4GB

Corsair CMW8GX4M1Z3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

12.0 20.6
写入速度，GB/s

7.5 16.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1853 3639

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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AMD AE34G1601U1 4GB

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