Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

Crucial Technology CT8G4SFS6266.M4FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 45

左右 -25% 更低的延时
更快的读取速度，GB/s

17.1 12.3

测试中的平均数值
更快的写入速度，GB/s

12.6 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 36
读取速度，GB/s

12.3 17.1
写入速度，GB/s

8.0 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Kingston KHX2400C15S4/16G 16GB

Kingston KHX2400C15S4/16G 16GB