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Kingston 9905471-054.A00LF 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB

Kingston 9905471-054.A00LF 8GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分
star star star star star
Kingston 9905471-054.A00LF 8GB

Kingston 9905471-054.A00LF 8GB

总分
star star star star star
Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异 规格 评论

差异

Kingston 9905471-054.A00LF 8GB 需要考虑的原因
Kingston 9905471-054.A00LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 27% 更低的延时
Micron Technology 16ATF1G64AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-054.A00LF 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 37
  • 读取速度，GB/s
    13.9 left arrow 14.7
  • 写入速度，GB/s
    9.1 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2510 left arrow 2592

Kingston 9905471-054.A00LF 8GB RAM的比较

Kingston 99U5471-036.A00LF 8GB
Super Talent F21UB8GS 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-054.A00LF 8GB
Kingston 9905471-054.A00LF 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
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AMD R534G1601U1S-UO 4GB
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Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston 9905678-044.A00G 8GB
Kingston 9905678-044.A00G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CMT32GX4M2K4000C19 16GB
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
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SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMA82GR8AMR4N-TF 16GB
SK Hynix HMA82GR8AMR4N-TF 16GB
内存RAM
takeMS International AG TMS2GB264D081-805U 2GB
takeMS International AG TMS2GB264D081-805U 2GB
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Mushkin MR[A/B]4U320LLLM8G 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905665-011.A00G 4GB
Kingston 9905665-011.A00G 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMD32GX4M2A2666C15 16GB
Corsair CMD32GX4M2A2666C15 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM