Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 22% 更低的延时
更快的读取速度，GB/s

16.9 14.7

测试中的平均数值
更快的写入速度，GB/s

12.0 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 37
读取速度，GB/s

16.9 14.7
写入速度，GB/s

12.0 10.6
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BL16G32C16S4B.16FE 16GB

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Samsung M395T5160QZ4-CE66 2GB

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V-GEN D4S8GL32A8TS 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A1K43BB0-CRC 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Crucial Technology BL8G26C16U4R.8FD 8GB

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Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB