Kingston 9905474-012.A00LF 2GB vs Kingston HX316C10F/4 4GB

总分

Kingston 9905474-012.A00LF 2GB

Kingston 9905474-012.A00LF 2GB

总分

Kingston HX316C10F/4 4GB

Kingston HX316C10F/4 4GB

差异规格评论

差异

Kingston 9905474-012.A00LF 2GB

需要考虑的原因
Kingston 9905474-012.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 67

左右 60% 更低的延时
更快的读取速度，GB/s

11.2 6.3

测试中的平均数值
更快的写入速度，GB/s

6.4 5.0

测试中的平均数值

Kingston HX316C10F/4 4GB

需要考虑的原因
Kingston HX316C10F/4 4GB

报告一个错误

更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Kingston 9905474-012.A00LF 2GB

Kingston HX316C10F/4 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 67
读取速度，GB/s

11.2 6.3
写入速度，GB/s

6.4 5.0
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1537 1247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 99U5429-007.A00LF 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Transcend Information TS2GSH64V1B 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB