Kingston 9905474-012.A00LF 2GB vs Kingston HX318C10FK/4 4GB

总分

Kingston 9905474-012.A00LF 2GB

Kingston 9905474-012.A00LF 2GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

差异规格评论

差异

Kingston 9905474-012.A00LF 2GB

需要考虑的原因
Kingston 9905474-012.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 69

左右 61% 更低的延时
更快的读取速度，GB/s

11.2 6.1

测试中的平均数值
更快的写入速度，GB/s

6.4 4.1

测试中的平均数值

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

更高的内存带宽，mbps

14900 10600

左右 1.41 更高的带宽

规格

完整的技术规格清单

Kingston 9905474-012.A00LF 2GB

Kingston HX318C10FK/4 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 69
读取速度，GB/s

11.2 6.1
写入速度，GB/s

6.4 4.1
内存带宽，mbps

10600 14900

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
时序/时钟速度

7-7-7-20 / 1333 MHz 9-10-9-28 / 1866 MHz
排名PassMark (越多越好)

1537 1116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK64GX4M8B3200C16 8GB

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Kingston HX318C10FK/4 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Samsung M391A1G43EB1-CPB 8GB

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Crucial Technology CT8G4DFS824A.M8FA 8GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Crucial Technology CB16GU2666.C8ET 16GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

Samsung M393B1G73QH0-CMA 8GB

Samsung M393B1G73QH0-CMA 8GB

Corsair CMD32GX4M4C3200C16 8GB

Corsair CMD32GX4M4C3200C16 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB