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Kingston 9905474-019.A00LF 2GB
Samsung M471A1G44AB0-CWE 8GB

Kingston 9905474-019.A00LF 2GB vs Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异 规格 评论

差异

Kingston 9905474-019.A00LF 2GB 需要考虑的原因
Kingston 9905474-019.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 50
    左右 48% 更低的延时
Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.3 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9905474-019.A00LF 2GB
Samsung M471A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 50
  • 读取速度，GB/s
    14.6 left arrow 15.3
  • 写入速度，GB/s
    7.8 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2207 left arrow 2512

Kingston 9905474-019.A00LF 2GB RAM的比较

Kingston 99U5471-012.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C15-4GVRB 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMT32GX4M2C3200C16 16GB
Corsair CMT32GX4M2C3200C16 16GB
内存RAM
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung M471A1K43CB1-CRCR 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM