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Kingston 9905474-052.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
比较
Kingston 9905474-052.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
总分
Kingston 9905474-052.A00LF 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905474-052.A00LF 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
70
左右 -100% 更低的延时
更快的读取速度,GB/s
9.8
6.5
测试中的平均数值
更快的写入速度,GB/s
7.9
3.4
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905474-052.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
70
35
读取速度,GB/s
6.5
9.8
写入速度,GB/s
3.4
7.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
680
2126
Kingston 9905474-052.A00LF 2GB RAM的比较
Kingston 99P5474-034.A00LF 2GB
Corsair CMW16GX4M2C3200C14 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KP4T2F-PSB 4GB
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Samsung M378B5273CH0-CH9 4GB
Kingston KF3200C16D4/8GX 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMW16GX4M2D3000C16 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C15-16GTZR 16GB
报告一个错误
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Bug description
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