RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 9905584-016.A00LF 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB

Kingston 9905584-016.A00LF 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

总分
star star star star star
Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

差异 规格 评论

差异

Kingston 9905584-016.A00LF 4GB 需要考虑的原因
Kingston 9905584-016.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
Samsung V-GeN D4S16GL26A8TL6 16GB 需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 9905584-016.A00LF 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    14.2 left arrow 16.0
  • 写入速度，GB/s
    8.5 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2277 left arrow 1897

Kingston 9905584-016.A00LF 4GB RAM的比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB

Samsung V-GeN D4S16GL26A8TL6 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMW32GX4M4C3000C15 8GB
Corsair CMW32GX4M4C3000C15 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Asgard VMA45UG-MIC1U22T2 8GB
Asgard VMA45UG-MIC1U22T2 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3300C16-4GRRD 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK32GX4M2F4000C19 16GB
Corsair CMK32GX4M2F4000C19 16GB
内存RAM