Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时
更快的读取速度，GB/s

16.9 16

测试中的平均数值

Samsung V-GeN D4S16GL26A8TL6 16GB

需要考虑的原因
Samsung V-GeN D4S16GL26A8TL6 16GB

报告一个错误

更快的写入速度，GB/s

13.4 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung V-GeN D4S16GL26A8TL6 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

16.9 16.0
写入速度，GB/s

12.0 13.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2601 1897

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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