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Kingston 9965433-034.A00LF 4GB
Corsair CMW8GX4M1D3000C16 8GB

Kingston 9965433-034.A00LF 4GB vs Corsair CMW8GX4M1D3000C16 8GB

总分
star star star star star
Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分
star star star star star
Corsair CMW8GX4M1D3000C16 8GB

Corsair CMW8GX4M1D3000C16 8GB

差异 规格 评论

差异

Kingston 9965433-034.A00LF 4GB 需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 60
    左右 30% 更低的延时
Corsair CMW8GX4M1D3000C16 8GB 需要考虑的原因
Corsair CMW8GX4M1D3000C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.3 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
Corsair CMW8GX4M1D3000C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 60
  • 读取速度，GB/s
    6.4 left arrow 17.3
  • 写入速度，GB/s
    6.7 left arrow 8.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1632 left arrow 2129

Kingston 9965433-034.A00LF 4GB RAM的比较

Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Corsair CMW8GX4M1D3000C16 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Kingston 9965433-034.A00LF 4GB
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内存RAM
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Kingston 9905700-017.A00G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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