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Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB

Kingston 9965433-034.A00LF 4GB vs G Skill Intl F4-3600C17-8GTZKW 8GB

总分
star star star star star
Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

差异 规格 评论

差异

Kingston 9965433-034.A00LF 4GB 需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
G Skill Intl F4-3600C17-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    6.4 left arrow 17.7
  • 写入速度，GB/s
    6.7 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1632 left arrow 3547

Kingston 9965433-034.A00LF 4GB RAM的比较

Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

G Skill Intl F4-3600C17-8GTZKW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Mushkin MES4S213FF16G28 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
G Skill Intl F4-3600C17-8GTZKW 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Kingston 9905403-156.A00LF 2GB
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内存RAM
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Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Kingston 9905403-444.A00LF 4GB
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SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
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内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
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Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM