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Kingston 9965433-406.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
比较
Kingston 9965433-406.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
总分
Kingston 9965433-406.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965433-406.A00LF 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 -16% 更低的延时
更快的读取速度,GB/s
14.6
10.3
测试中的平均数值
更快的写入速度,GB/s
9.9
9.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston 9965433-406.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
25
读取速度,GB/s
10.3
14.6
写入速度,GB/s
9.4
9.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2342
2427
Kingston 9965433-406.A00LF 8GB RAM的比较
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3400C16-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965433-406.A00LF 8GB
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Team Group Inc. ZEUS-2133 8GB
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Samsung M378B5673EH1-CF8 2GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Corsair CM2X2048-6400C5DHX 2GB
G Skill Intl F4-2400C15-8GVB 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Kingston 9905471-071.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
报告一个错误
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Bug description
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