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Kingston 9965516-112.A00LF 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB

Kingston 9965516-112.A00LF 16GB vs A-DATA Technology AO1E34RCSV1-BF1S 16GB

总分
star star star star star
Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分
star star star star star
A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

差异 规格 评论

差异

Kingston 9965516-112.A00LF 16GB 需要考虑的原因
Kingston 9965516-112.A00LF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 57
    左右 42% 更低的延时
A-DATA Technology AO1E34RCSV1-BF1S 16GB 需要考虑的原因
A-DATA Technology AO1E34RCSV1-BF1S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 9.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 9965516-112.A00LF 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 57
  • 读取速度，GB/s
    9.1 left arrow 16.8
  • 写入速度，GB/s
    9.9 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2279 left arrow 2792

Kingston 9965516-112.A00LF 16GB RAM的比较

Kingston 9965516-071.A00LF 16GB
Kingston 9965516-001.B00LF 8GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston MSI24D4U7D8MH-16 16GB
Kingston MSI24D4U7D8MH-16 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2800C16-8GRK 8GB
G Skill Intl F4-2800C16-8GRK 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation D4U2666P-8G 8GB
Panram International Corporation D4U2666P-8G 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3600C19-16GSXW 16GB
G Skill Intl F4-3600C19-16GSXW 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM