Kingston 9965516-112.A00LF 16GB vs Corsair CMR16GX4M2A2666C16 8GB

总分

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

差异规格评论

差异

Kingston 9965516-112.A00LF 16GB

需要考虑的原因
Kingston 9965516-112.A00LF 16GB

报告一个错误

Corsair CMR16GX4M2A2666C16 8GB

需要考虑的原因
Corsair CMR16GX4M2A2666C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时
更快的读取速度，GB/s

16.5 9.1

测试中的平均数值
更快的写入速度，GB/s

12.3 9.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-112.A00LF 16GB

Corsair CMR16GX4M2A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

9.1 16.5
写入速度，GB/s

9.9 12.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2279 3072

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S5 1GB

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PUSKILL DDR3 1600 8G 8GB

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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Team Group Inc. Vulcan-1600 4GB

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Kingston 99P5474-014.A00LF 4GB

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Corsair CMK32GX4M2B3000C15 16GB

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Kingston 9965516-112.A00LF 16GB

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Samsung M378B5173BH0-CH9 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMT16GX4M2K3600C16 8GB

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Kingston 9905403-515.A00LF 8GB

Kingston KHX2666C16/16G 16GB

Kingston KHX2666C16/16G 16GB

Samsung M393B5170FH0-CH9 4GB

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Micron Technology 36ASF2G72PZ-2G6E1 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB