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Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C14-16GTZ 16GB

Kingston 9965516-112.A00LF 16GB vs G Skill Intl F4-3200C14-16GTZ 16GB

总分
star star star star star
Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

差异 规格 评论

差异

Kingston 9965516-112.A00LF 16GB 需要考虑的原因
Kingston 9965516-112.A00LF 16GB
报告一个错误
G Skill Intl F4-3200C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 33
    左右 -10% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 30
  • 读取速度，GB/s
    9.1 left arrow 17.7
  • 写入速度，GB/s
    9.9 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2279 left arrow 3593

Kingston 9965516-112.A00LF 16GB RAM的比较

Kingston 9965516-071.A00LF 16GB
Kingston 9965516-001.B00LF 8GB

G Skill Intl F4-3200C14-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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Samsung M378B5173QH0-CK0 4GB
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
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Kingston 99U5474-010.A00LF 2GB
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内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Corsair CM4X8GF2400C16S4 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTRG 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Kingston KF3200C16D4/16GX 16GB
内存RAM
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Corsair CMK256GX4M8A2400C16 32GB
内存RAM
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Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM