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Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4SFD824A.C16FBD1 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
Crucial Technology CT8G4SFD824A.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    16.1 left arrow 17.7
  • 写入速度，GB/s
    10.1 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2834

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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SK Hynix HMT451S6DFR8A-PB 4GB
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston KHX1600C9D3/8G 8GB
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Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM
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Samsung M471B1G73DB0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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Micron Technology M471A1K43BB1-CRC 8GB
内存RAM