Kingston 9965516-430.A00G 16GB vs Crucial Technology BLS16G4D30AESE.M16FE 16GB

总分

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

总分

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

差异规格评论

差异

Kingston 9965516-430.A00G 16GB

需要考虑的原因
Kingston 9965516-430.A00G 16GB

报告一个错误

Crucial Technology BLS16G4D30AESE.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESE.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

17.6 7.9

测试中的平均数值
更快的写入速度，GB/s

13.3 7.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-430.A00G 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

7.9 17.6
写入速度，GB/s

7.0 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1798 3446

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston 9965516-430.A00G 16GB

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Kingston MSI21D4S15HAG/8G 8GB

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Samsung M391B5673EH1-CH9 2GB

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Micron Technology 4ATF51264AZ-2G6E1 4GB

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Samsung M471B5173DB0-YK0 4GB

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AMD R538G1601U2S 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB

AMD AE34G1601U1 4GB

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB