Kingston 9965516-430.A00G 16GB vs G Skill Intl F4-2400C15-8GTZRX 8GB

总分

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

总分

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

差异规格评论

差异

Kingston 9965516-430.A00G 16GB

需要考虑的原因
Kingston 9965516-430.A00G 16GB

报告一个错误

G Skill Intl F4-2400C15-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

17.4 7.9

测试中的平均数值
更快的写入速度，GB/s

12.7 7.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-430.A00G 16GB

G Skill Intl F4-2400C15-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

7.9 17.4
写入速度，GB/s

7.0 12.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1798 3135

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664BA160B.C16F 2GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9965640-008.A01G 32GB

Kingston 9965640-008.A01G 32GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston KY7N41-MID 8GB

Kingston KY7N41-MID 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

G Skill Intl F4-2400C15-8GTZRX 8GB

G Skill Intl F4-2400C15-8GTZRX 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB