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Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Chun Well Technology Holding Limited MD4U1632161DCW 16GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    12.9 left arrow 15.7
  • 写入速度，GB/s
    9.0 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3318

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905703-011.A00G 16GB
Kingston 9905703-011.A00G 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK32GX4M4A2400C16 8GB
Corsair CMK32GX4M4A2400C16 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston KHX2666C16D4/16GX 16GB
Kingston KHX2666C16D4/16GX 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM