Corsair CMV4GX3M1B1600C11 4GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Corsair CMV4GX3M1B1600C11 4GB

需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

更快的读取速度，GB/s

14.7 14.2

测试中的平均数值
更快的写入速度，GB/s

10.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMV4GX3M1B1600C11 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

14.2 14.7
写入速度，GB/s

8.1 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2307 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF3200C16D4/8GX 8GB

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Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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Samsung M391A1G43EB1-CRC 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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PNY Electronics PNY 2GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB