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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BL16G32C16U4R.M16FE 16GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Crucial Technology BL16G32C16U4R.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
Crucial Technology BL16G32C16U4R.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
42
左右 -45% 更低的延时
更快的读取速度,GB/s
19
9.7
测试中的平均数值
更快的写入速度,GB/s
15.4
6.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
29
读取速度,GB/s
9.7
19.0
写入速度,GB/s
6.0
15.4
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1396
3714
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-2133C15-8GRR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-3200C14-16GTZ 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Apacer Technology GD2.0927WH.001 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHYXPX-MID 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GU880-32A160X 8GB
Kingston 9965525-155.A00LF 8GB
Kingston SMD4-S8G48HJ-26V 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Kingston 99U5474-038.A00LF 4GB
Samsung M471A2K43CB1-CRCR 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Samsung M471B5773DH0-CK0 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
报告一个错误
×
Bug description
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