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Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kingston 9965525-018.A00LF 4GB vs A-DATA Technology AO2P21FC8R2-BRGS 8GB

总分
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分
star star star star star
A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

差异 规格 评论

差异

Kingston 9965525-018.A00LF 4GB 需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
A-DATA Technology AO2P21FC8R2-BRGS 8GB 需要考虑的原因
A-DATA Technology AO2P21FC8R2-BRGS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 18.7
  • 写入速度，GB/s
    8.6 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 3495

Kingston 9965525-018.A00LF 4GB RAM的比较

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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内存RAM
Samsung M471B5273DH0-CH9 4GB
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Kingston 9965525-018.A00LF 4GB
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Samsung M3 78T2863EHS-CF7 1GB
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A-DATA Technology VDQVE1B16 2GB
Kingston 9905624-010.A00G 4GB
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内存RAM
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内存RAM
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Team Group Inc. Team-Elite-1333 4GB
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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM
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Corsair CM4B8G2J2666A15D 8GB
内存RAM