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Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB

Kingston 9965525-018.A00LF 4GB vs Micron Technology 16ATF2G64AZ-2G3H1 16GB

总分
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

差异 规格 评论

差异

Kingston 9965525-018.A00LF 4GB 需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Micron Technology 16ATF2G64AZ-2G3H1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3H1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.2 left arrow 14.4
  • 写入速度，GB/s
    8.6 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2489

Kingston 9965525-018.A00LF 4GB RAM的比较

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Kingston 99U5474-013.A00LF 2GB
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Corsair CM4X4GF2400C16S2 4GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM
Apacer Technology 78.01GA0.9K5 1GB
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Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
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内存RAM
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内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Panram International Corporation PUD42400C168GVS 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM