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Kingston 9965525-018.A00LF 4GB
Samsung M471A2G43BB2-CWE 16GB

Kingston 9965525-018.A00LF 4GB vs Samsung M471A2G43BB2-CWE 16GB

总分
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分
star star star star star
Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

差异 规格 评论

差异

Kingston 9965525-018.A00LF 4GB 需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 60
    左右 55% 更低的延时
Samsung M471A2G43BB2-CWE 16GB 需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
Samsung M471A2G43BB2-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 60
  • 读取速度，GB/s
    13.2 left arrow 14.9
  • 写入速度，GB/s
    8.6 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2511

Kingston 9965525-018.A00LF 4GB RAM的比较

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Samsung M471A2G43BB2-CWE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM