RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9965525-018.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
比较
Kingston 9965525-018.A00LF 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
总分
Kingston 9965525-018.A00LF 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965525-018.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
31
左右 13% 更低的延时
更快的读取速度,GB/s
13.2
12.5
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
报告一个错误
更快的写入速度,GB/s
9.4
8.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9965525-018.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
31
读取速度,GB/s
13.2
12.5
写入速度,GB/s
8.6
9.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2196
2361
Kingston 9965525-018.A00LF 4GB RAM的比较
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-12800CL7-4GBXM 4GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Kingston 9905471-006.A00LF 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
Kingston KF552C40-16 16GB
Kingston HP26D4U9S8ME-8X 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Kingston KF552C40-16 16GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Kingston KVR16N11/8-SP 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Kingston 9905403-061.A00LF 2GB
Transcend Information TS512MSH64V1H 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW64GX4M4E3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR32GX4M4C3200C16 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston ACR26D4S9D8MD-16 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Transcend Information JM2400HSB-8G 8GB
Samsung M378B5673EH1-CF8 2GB
DSL Memory D4SH1G081SH26A-C 8GB
报告一个错误
×
Bug description
Source link