Kingston 9965525-140.A00LF 8GB vs Corsair CMD128GX4M8B3200C16 16GB

总分

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

总分

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

差异规格评论

差异

Kingston 9965525-140.A00LF 8GB

需要考虑的原因
Kingston 9965525-140.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时

Corsair CMD128GX4M8B3200C16 16GB

需要考虑的原因
Corsair CMD128GX4M8B3200C16 16GB

报告一个错误

更快的读取速度，GB/s

12.2 9.8

测试中的平均数值
更快的写入速度，GB/s

12.1 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-140.A00LF 8GB

Corsair CMD128GX4M8B3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 31
读取速度，GB/s

9.8 12.2
写入速度，GB/s

6.4 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1927 2869

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2K43BB1-CPB 16GB

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Crucial Technology BL32G32C16S4B.M16FB1 32GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-4400C16-8GTZR 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Mushkin MR[ABC]4U360JNNM16G 16GB