Kingston 9965525-140.A00LF 8GB vs Corsair CMW16GX4M2K4266C19 8GB

总分

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

总分

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

差异规格评论

差异

Kingston 9965525-140.A00LF 8GB

需要考虑的原因
Kingston 9965525-140.A00LF 8GB

报告一个错误

Corsair CMW16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMW16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 30

左右 -30% 更低的延时
更快的读取速度，GB/s

19 9.8

测试中的平均数值
更快的写入速度，GB/s

16.5 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-140.A00LF 8GB

Corsair CMW16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 23
读取速度，GB/s

9.8 19.0
写入速度，GB/s

6.4 16.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1927 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1G70BH0-YK0 8GB

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Samsung M393A2K40BB1-CRC 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 9965525-140.A00LF 8GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Samsung M471B1G73DB0-YK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

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SK Hynix HMT351S6CFR8C-PB 4GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB