Kingston 9965525-144.A00LF 8GB vs Crucial Technology CT8G4DFRA266.C8FE 8GB

总分

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

总分

Crucial Technology CT8G4DFRA266.C8FE 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

差异规格评论

差异

Kingston 9965525-144.A00LF 8GB

需要考虑的原因
Kingston 9965525-144.A00LF 8GB

报告一个错误

Crucial Technology CT8G4DFRA266.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 70

左右 -112% 更低的延时
更快的读取速度，GB/s

16.9 6.5

测试中的平均数值
更快的写入速度，GB/s

13.2 4.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-144.A00LF 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

70 33
读取速度，GB/s

6.5 16.9
写入速度，GB/s

4.6 13.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1264 3134

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB