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Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C16-8GTZR 8GB

Samsung M471B5273CH0-CH9 4GB vs G Skill Intl F4-4000C16-8GTZR 8GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
G Skill Intl F4-4000C16-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4000C16-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 48
    左右 -85% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 26
  • 读取速度，GB/s
    8.9 left arrow 18.2
  • 写入速度，GB/s
    5.9 left arrow 17.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3885

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

G Skill Intl F4-4000C16-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston 99U5428-018.A00LF 8GB
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SK Hynix HMT41GS6AFR8A-PB 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
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Kingston XF875V-HYA 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
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内存RAM
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Kingston 9905403-090.A01LF 4GB
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内存RAM
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Kingston 9905403-174.A00LF 2GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
G Skill Intl F4-3200C14-16GTZKW 16GB
G Skill Intl F4-3200C14-16GTZKW 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
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G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
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A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
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Crucial Technology CT16G4SFD824A.M16FD 16GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
内存RAM
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G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
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Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM